FDN306P

onsemi

FDN306P

Analog & Power

MOSFET P-CH 12V 2.6A SUPERSOT3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 2.6A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1138 pF @ 6 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)