FDMS86350

onsemi

FDMS86350

Datasheet

Analog & Power

MOSFET N-CH 80V 25A/130A POWER56

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10680 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 130A (Tc)
Max Power Dissipation2.7W (Ta), 156W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)