FDMS8560S

onsemi

FDMS8560S

Datasheet

Analog & Power

MOSFET N-CH 25V 30A/70A 8PQFN

Obsolete8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 13 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2.2V @ 1mA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 70A (Tc)
Max Power Dissipation2.5W (Ta), 65W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C~150°C(TJ)