FDMS3615S

onsemi

FDMS3615S

Datasheet

Analog & Power

MOSFET 2N-CH 25V 16A/18A POWER56

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.8mOhm @ 16A, 10V
Base Product NumberFDMS3615
Configuration2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1765pF @ 13V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C16A, 18A
Power - Max1W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePower56

Environmental

Operating Temperature-55°C ~ 150°C (TJ)