FDMS3572

onsemi

FDMS3572

Datasheet

Analog & Power

MOSFET N-CH 80V 8.8A/22A 8MLP

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16.5mOhm @ 8.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2490 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 22A (Tc)
Max Power Dissipation2.5W (Ta), 78W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (5x6), Power56

Environmental

Operating Temperature-55°C ~ 150°C (TJ)