FDMS2D5N08C

onsemi

FDMS2D5N08C

Analog & Power

MOSFET N-CH 80V 166A POWER56

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7mOhm @ 68A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6240 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 380µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C166A (Tc)
Max Power Dissipation138W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePower56

Environmental

Operating Temperature-55°C~150°C(TJ)