FDMS2D4N03S

onsemi

FDMS2D4N03S

Datasheet

Analog & Power

MOSFET N-CH 30V 163A 8PQFN

Obsolete8-PowerSMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 28A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6540 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C163A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

Package / Case8-PowerSMD, Flat Leads
Supplier Device Package8-PQFN (5x6), Power56

Environmental

Operating Temperature-55°C ~ 150°C (TJ)