FDMS0310AS

onsemi

FDMS0310AS

Datasheet

Analog & Power

MOSFET N-CH 30V 19A/22A 8PQFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.3mOhm @ 19A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2280 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 22A (Tc)
Max Power Dissipation2.5W (Ta), 41W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)