FDMQ86530L

onsemi

FDMQ86530L

Datasheet

Analog & Power

MOSFET 4N-CH 60V 8A 12MLP

Active12-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17.5mOhm @ 8A, 10V
Base Product NumberFDMQ86530
Configuration4 N-Channel (Full Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2295pF @ 30V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesGreenBridge™ PowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C8A
Power - Max1.9W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case12-WDFN Exposed Pad
Supplier Device Package12-MLP (5x4.5)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)