FDMJ1032C

onsemi

FDMJ1032C

Analog & Power

MOSFET N/P-CH 20V 3.2A/2.5A SC75

Obsolete6-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 3.2A, 4.5V
Base Product NumberFDMJ1032
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3.2A, 2.5A
Power - Max800mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device PackageSC-75, MicroFET

Environmental

Operating Temperature-55°C ~ 150°C (TJ)