FDMJ1023PZ

onsemi

FDMJ1023PZ

Analog & Power

MOSFET 2P-CH 20V 2.9A SC75

Obsolete6-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs112mOhm @ 2.9A, 4.5V
Base Product NumberFDMJ1023
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.9A
Power - Max700mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device PackageSC-75, MicroFET

Environmental

Operating Temperature-55°C ~ 150°C (TJ)