FDME1023PZT

onsemi

FDME1023PZT

Datasheet

Analog & Power

MOSFET 2P-CH 20V 2.6A 6MICROFET

Active6-UFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs142mOhm @ 2.3A, 4.5V
Base Product NumberFDME1023
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds405pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.6A
Power - Max600mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UFDFN Exposed Pad
Supplier Device Package6-MicroFET (1.6x1.6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)