FDMC8884

onsemi

FDMC8884

Analog & Power

MOSFET N-CH 30V 9A/15A 8MLP

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs19mOhm @ 9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds685 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 15A (Tc)
Max Power Dissipation2.3W (Ta), 18W (Tc)

Mechanical

Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)