FDMC8882

onsemi

FDMC8882

Datasheet

Analog & Power

MOSFET N-CH 30V 10.5A/16A 8MLP

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.3mOhm @ 10.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds945 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10.5A (Ta), 16A (Tc)
Max Power Dissipation2.3W (Ta), 18W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)