FDMC86261P

onsemi

FDMC86261P

Datasheet

Analog & Power

MOSFET P-CH 150V 2.7A/9A 8MLP

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 2.4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1360 pF @ 75 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta), 9A (Tc)
Max Power Dissipation2.3W (Ta), 40W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)