FDMC86259P

onsemi

FDMC86259P

Datasheet

Analog & Power

MOSFET P-CH 150V 3.2A/13A PWR33

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs107mOhm @ 3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2045 pF @ 75 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta), 13A (Tc)
Max Power Dissipation2.3W (Ta), 62W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device PackagePower33

Environmental

Operating Temperature-55°C~150°C(TJ)