FDMC8554

onsemi

FDMC8554

Analog & Power

MOSFET N-CH 20V 16.5A 8MLP

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 16.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Max Power Dissipation2W (Ta), 41W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)