FDMC8010DC

onsemi

FDMC8010DC

Datasheet

Analog & Power

MOSFET N-CH 30V 37A 8PQFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.28mOhm @ 37A, 10V
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds7080 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C37A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)