FDMC6890NZ

onsemi

FDMC6890NZ

Datasheet

Analog & Power

MOSFET 2N-CH 20V 4A MICROFET 3X3

Discontinued6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs68mOhm @ 4A, 4.5V
Base Product NumberFDMC6890
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusLast Time Buy
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C4A
Power - Max1.92W, 1.78W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
Supplier Device PackageMicroFET 3x3mm

Environmental

Operating Temperature-55°C ~ 150°C (TJ)