FDMC6686P

onsemi

FDMC6686P

Datasheet

Analog & Power

MOSFET P-CH 20V 18A/56A 8PQFN

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4mOhm @ 18A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds13200 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 56A (Tc)
Max Power Dissipation2.3W (Ta), 40W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (3.3x3.3), Power33

Environmental

Operating Temperature-55°C ~ 150°C (TJ)