FDMC510P

onsemi

FDMC510P

Datasheet

Analog & Power

MOSFET P-CH 20V 12A/18A 8MLP

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 12A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7860 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 18A (Tc)
Max Power Dissipation2.3W (Ta), 41W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C~150°C(TJ)