Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2.2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 100 V |
| Manufacturer | onsemi |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | UniFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta), 9.5A (Tc) |
| Max Power Dissipation | 2.1W (Ta), 42W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|