FDMC013P030Z

onsemi

FDMC013P030Z

Datasheet

Analog & Power

P-CHANNEL POWERTRENCH MOSFET -30

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 14A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5785 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Max Power Dissipation30W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)