FDMB506P

onsemi

FDMB506P

Analog & Power

MOSFET P-CH 20V 6.8A 8MLP

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.8A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2960 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-MLP, MicroFET (3x1.9)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)