FDMA910PZ

onsemi

FDMA910PZ

Datasheet

Analog & Power

MOSFET P-CH 20V 9.4A 6MICROFET

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 9.4A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2805 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta)
Max Power Dissipation2.4W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)