FDMA8884

onsemi

FDMA8884

Datasheet

Analog & Power

MOSFET N-CH 30V 6.5/8A 6MICROFET

Obsolete6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 8A (Tc)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)