FDMA86265P

onsemi

FDMA86265P

Datasheet

Analog & Power

MOSFET P-CH 150V 1A 6MICROFET

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 1A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 75 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation2.4W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)