FDMA86151L

onsemi

FDMA86151L

Datasheet

Analog & Power

MOSFET N-CH 100V 3.3A 6MICROFET

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs88mOhm @ 3.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Max Power Dissipation2.4W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)