FDMA6676PZ

onsemi

FDMA6676PZ

Datasheet

Analog & Power

MOSFET P-CH 30V 11A 6MICROFET

Obsolete6-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.5mOhm @ 11A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2160 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.6V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Max Power Dissipation2.4W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerWDFN
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)