FDMA2002NZ

onsemi

FDMA2002NZ

Datasheet

Analog & Power

MOSFET 2N-CH 30V 2.9A 6MICROFET

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs123mOhm @ 2.9A, 4.5V
Base Product NumberFDMA2002
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2.9A
Power - Max650mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)