FDMA1025P

onsemi

FDMA1025P

Datasheet

Analog & Power

MOSFET 2P-CH 20V 3.1A 6MICROFET

Obsolete6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs155mOhm @ 3.1A, 4.5V
Base Product NumberFDMA1025
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3.1A
Power - Max700mW

Mechanical

PackageCut Tape (CT)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)