FDI2532

onsemi

FDI2532

Analog & Power

MOSFET N-CH 150V 8A/79A I2PAK

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 33A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5870 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 79A (Tc)
Max Power Dissipation310W (Tc)

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)