FDG6322C

onsemi

FDG6322C

Datasheet

Analog & Power

MOSFET N/P-CH 25V 0.22A SC88

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 220mA, 4.5V
Base Product NumberFDG6322
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C220mA, 410mA
Power - Max300mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)