FDG6321C-F169

onsemi

FDG6321C-F169

Analog & Power

MOSFET N/P-CH 25V 0.5A SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
Base Product NumberFDG6321
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V, 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V, 62pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C500mA (Ta), 410mA (Ta)
Power - Max300mW

Mechanical

PackageBulk
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)