FDFMA3N109

onsemi

FDFMA3N109

Datasheet

Analog & Power

MOSFET N-CH 30V 2.9A 6MICROFET

Obsolete6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs123mOhm @ 2.9A, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.9A (Tc)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)