FDD850N10LD

onsemi

FDD850N10LD

Datasheet

Analog & Power

MOSFET N-CH 100V 15.3A TO252-4L

ObsoleteTO-252-5, DPak (4 Leads + Tab), TO-252ADAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1465 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C15.3A (Tc)
Max Power Dissipation42W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device PackageTO-252 (DPAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)