FDD6780A

onsemi

FDD6780A

Analog & Power

MOSFET N-CH 25V 16.4A/30A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.6mOhm @ 16.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1235 pF @ 13 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 30A (Tc)
Max Power Dissipation3.7W (Ta), 32.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)