FDD6685-G

onsemi

FDD6685-G

Analog & Power

MOSFET N-CH 60V SUPERSOT6

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 11A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1715 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C~175°C(TJ)