FDD6512A

onsemi

FDD6512A

Analog & Power

MOSFET N-CH 20V 10.7A/36A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs21mOhm @ 10.7A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1082 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta), 36A (Tc)
Max Power Dissipation3.8W (Ta), 43W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)