FDD6030L

onsemi

FDD6030L

Datasheet

Analog & Power

MOSFET N-CH 30V 12A/50A DPAK

ObsoleteTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.5mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 50A (Tc)
Max Power Dissipation3.2W (Ta), 56W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)