FDD306P

onsemi

FDD306P

Datasheet

Analog & Power

MOSFET P-CH 12V 6.7A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28mOhm @ 6.7A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 6 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.7A (Ta)
Max Power Dissipation52W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)