FDC6432SH

onsemi

FDC6432SH

Analog & Power

MOSFET N/P-CH 30V/12V 2.4A SSOT6

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 2.4A, 10V
Base Product NumberFDC6432
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage30V, 12V
Current - Continuous Drain (Id) @ 25°C2.4A, 2.5A
Power - Max700mW

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)