FDC6301N

onsemi

FDC6301N

Datasheet

Analog & Power

MOSFET 2N-CH 25V 0.22A SSOT6

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 4.5V
Base Product NumberFDC6301
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C220mA
Power - Max700mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)