FDC5612-G

onsemi

FDC5612-G

Analog & Power

MOSFET N-CH 60V SUPERSOT6

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Max Power Dissipation800mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6

Environmental

Operating Temperature-55°C~150°C(TJ)