FDB8444TS

onsemi

FDB8444TS

Analog & Power

MOSFET N-CH 40V 20A/70A TO263-5

ObsoleteTO-263-6, D²Pak (5 Leads + Tab), TO-263BAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 70A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs338 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds8410 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 70A (Tc)
Max Power Dissipation181W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device PackageTO-263-5

Environmental

Operating Temperature-55°C ~ 175°C (TJ)