FDB6670AS

onsemi

FDB6670AS

Analog & Power

MOSFET N-CH 30V 62A TO263AB

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.5mOhm @ 31A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C62A (Ta)
Max Power Dissipation62.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)