FDB0260N1007L

onsemi

FDB0260N1007L

Datasheet

Analog & Power

MOSFET N-CH 100V 200A TO263-7

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.6mOhm @ 27A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8545 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation3.8W (Ta), 250W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageTO-263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)