FDB024N08BL7

onsemi

FDB024N08BL7

Datasheet

Analog & Power

MOSFET N-CH 80V 120A TO263-7

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13530 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation246W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageTO-263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)