FDB024N06

onsemi

FDB024N06

Datasheet

Analog & Power

MOSFET N-CH 60V 120A D2PAK

DiscontinuedTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14885 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusLast Time Buy
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation395W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)