FDB024N04AL7

onsemi

FDB024N04AL7

Datasheet

Analog & Power

MOSFET N-CH 40V 100A TO263-7

ObsoleteTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Max Power Dissipation214W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageTO-263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)